Products

Multi-Wavelength Laser Systems

System with 1064 nm, 532 nm, and 355 nm beams in a single unit.Spot diameter and focal position are individually adjustable for each wavelength via dedicated zoom beam expanders. Computer-controlled beam expanders are available as an option.

Versatile Multi-Wavelength Laser Systems for Selective Material Processing

We provide advanced laser systems that combine multiple wavelengths—1064 nm, 532 nm, and 355 nm—in a single, integrated solution. This enables precise, material-selective layer processing within one setup.

For example:

  • 532 nm effectively removes semiconductor materials from transparent electrodes.

  • 355 nm can ablate transparent electrodes from glass substrates.

  • 1064 nm allows for the removal of metal electrodes from semiconductor layers.

The desired wavelength can be selected via computer control, allowing flexible, automated processing of different material layers in a single workflow.

Different Laser Modules

Stand-alone laser system for processing in air
Laser systems for processing in vacuum
Laser systems for glove boxes

Laser Scriber for Perovskite Solar Cells and Modules

For thin-film photovoltaic modulesn and for wafe based solar cells

And available as laser system for glove box

Laser system for glove box. 

Laser Processes for Battery Electrodes with Multiple Wavelength Laser System

Laser Processes for Battery Electrodes with multiple wavelength laser system

  • 1064 nm decoating of battery electrodes from active material without damaging the copper or aluminum foil
  • 532 nm cutting of aluminum and copper, de oxidizing and activation of metal foils
  • 355 nm precise cutting of metal foils, opening of battery packs without mechanical stress
Stress-free laser cutting

Our laser portfolio

Applications (examples)

And Laser scribing (P1, P2, P3 and insulation cut) for interconnection of thin-film solar cells to modules. We use a "trough-the-lens" positioning system with special Illumination for positioning the P2 and p3 scribe with up to ±  5 µm in relation to the P1 scribe
Laser edge deletion (LED) together with the laser scriber in one system or as a cost effective separate system.